Effects of Intrinsic Region Width in SI(Li) p i n Diodes
Description of certain effects related to the width of the intrinsic region produced in a silicon p-i-n diode by lithium ion drifting. It is found that for wider intrinsic regions at large forward biases there is a larger ohmic drop across the region and a correspondingly smaller current. Moreover, the recovery time decreases with increasing intrinsic region width. Conversely, the decay phase time increases with increasing intrinsic region width and with increasing current levels.