Effects of Intrinsic Region Width in SI(Li) p i n Diodes
| dc.contributor.author | Harman, Thomas L. | |
| dc.date.accessioned | 2019-10-01T15:48:35Z | |
| dc.date.available | 2019-10-01T15:48:35Z | |
| dc.date.issued | 1974 | |
| dc.description.abstract | Description of certain effects related to the width of the intrinsic region produced in a silicon p-i-n diode by lithium ion drifting. It is found that for wider intrinsic regions at large forward biases there is a larger ohmic drop across the region and a correspondingly smaller current. Moreover, the recovery time decreases with increasing intrinsic region width. Conversely, the decay phase time increases with increasing intrinsic region width and with increasing current levels. | en_US |
| dc.identifier.citation | T. L. Harman, T. A. Rabson and T. K. Gaylord, "Effects of Intrinsic Region Width in SI(Li) p i n Diodes," Solid State Electronics, Vol. 17, pp. 408 411, 1974. | en_US |
| dc.identifier.issn | 1879-2405 | |
| dc.identifier.uri | https://hdl.handle.net/10657.1/1484 | |
| dc.publisher | Solid State Electronics | en_US |
| dc.relation.ispartofseries | Vol. 17; | |
| dc.title | Effects of Intrinsic Region Width in SI(Li) p i n Diodes | en_US |
| dc.type | Article | en_US |