Harman, Thomas L.2019-10-012019-10-011974T. L. Harman, T. A. Rabson and T. K. Gaylord, "Effects of Intrinsic Region Width in SI(Li) p i n Diodes," Solid State Electronics, Vol. 17, pp. 408 411, 1974.1879-2405https://hdl.handle.net/10657.1/1484Description of certain effects related to the width of the intrinsic region produced in a silicon p-i-n diode by lithium ion drifting. It is found that for wider intrinsic regions at large forward biases there is a larger ohmic drop across the region and a correspondingly smaller current. Moreover, the recovery time decreases with increasing intrinsic region width. Conversely, the decay phase time increases with increasing intrinsic region width and with increasing current levels.Article