Effects of Intrinsic Region Width in SI(Li) p i n Diodes
Date
1974
Authors
Harman, Thomas L.
Journal Title
Journal ISSN
Volume Title
Publisher
Solid State Electronics
Abstract
Description of certain effects related to the width of the intrinsic region produced in a silicon p-i-n diode by lithium ion drifting. It is found that for wider intrinsic regions at large forward biases there is a larger ohmic drop across the region and a correspondingly smaller current. Moreover, the recovery time decreases with increasing intrinsic region width. Conversely, the decay phase time increases with increasing intrinsic region width and with increasing current levels.
Description
Keywords
Citation
T. L. Harman, T. A. Rabson and T. K. Gaylord, "Effects of Intrinsic Region Width in SI(Li) p i n Diodes," Solid State Electronics, Vol. 17, pp. 408 411, 1974.